Self-consistent electrothermal analysis of nanotube network transistors

نویسندگان

  • S. Kumar
  • N. Pimparkar
  • J. Y. Murthy
  • M. A. Alam
چکیده

We develop an electrothermal transport model for nanocomposite thin films based on self-consistent solution of drift-diffusion and Poisson equations for electrons coupled with diffusive transport of heat. This model is used to analyze the performance of an electronic display the pixels of which are controlled by carbon nanotube CNT network thin-film transistors TFTs . The effect of electrothermal coupling on device performance and steady state temperature rise is analyzed as a function of key device parameters such as channel length, network density, tube-to-substrate thermal conductance, and tube-to-substrate thermal conductivity ratio. Our analysis suggests that device on-current Ion may reduce by 30% for a 1 m channel length devices due to self-heating. The temperature rise in such devices can be as high as 500 K in extreme cases due to the thermally insulating substrate and the low tube-to-substrate thermal conductance. These results suggest that an appropriate combination of network density, channel length and width should be selected for CNT-TFTs to avoid device temperature rise above acceptable limits. We analyze the effectiveness of active cooling in reducing the temperature and enhancing the performance of the device. We find that the high thermal spreading resistance between the CNT device and the electronic display reduces the effectiveness of forced convective cooling, necessitating the exploration of alternative designs for viable CNT-FET based display technology. © 2011 American Institute of Physics. doi:10.1063/1.3524209

منابع مشابه

Band bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...

متن کامل

Band bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...

متن کامل

Self-consistent electrothermal Monte Carlo simulation of single InAs nanowire channel metal-insulator field-effect transistors

Electron transport and self-heating effects are investigated in metal-insulator field-effect transistors with a single InAs nanowire channel, using a three-dimensional electrothermal Monte Carlo simulator based on finite-element meshing. The model, coupling an ensemble Monte Carlo simulation with the solution of the heat diffusion equation, is carefully calibrated with data from experimental wo...

متن کامل

Electrothermal simulation of the self-heating effects in GaN-based field-effect transistors

We report results of the analytical and numerical investigation of self-heating effects in GaN-based high-power field-effect transistors. The problem of heat transfer in a transistor structure has been solved both analytically, using the method of images, and numerically. Two-dimensional electrothermal simulations of the GaN metal-semiconductor field-effect transistors on SiC and sapphire subst...

متن کامل

Performance Analysis of Reversible Sequential Circuits Based on Carbon NanoTube Field Effect Transistors (CNTFETs)

This study presents the importance of reversible logic in designing of high performance and low power consumption digital circuits. In our research, the various forms of sequential reversible circuits such as D, T, SR and JK flip-flops are investigated based on carbon nanotube field-effect transistors. All reversible flip-flops are simulated in two voltages, 0.3 and 0.5 Volt. Our results show t...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

متن کامل
عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2011